Spin-orbit effects in a graphene bipolar pn junction

2009/06/30 by A. Yamakage, K. -I. Imura, K.-I. Imura +2 · 39 citations
Materials Science · Physics and Astronomy · #Conductance #Fano plane #Graphene #Graphene research and applications #Perpendicular #Quantum and electron transport phenomena #Reflection (computer programming) #Topological Materials and Phenomena #cond-mat.mes-hall #p–n junction

paper · pdf · doi:10.1209/0295-5075/87/47005

published in Europhysics Letters (EPL) 87(4), 47005 (Institute of Physics) · 6 pages, 5 figures, conductance and Fano factor plots added

openalex publication_date 2009/08/01 · arxiv created 2009/09/04 · arxiv updated 2015/05/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06

Abstract

A graphene pn junction is studied theoretically in the presence of both intrinsic and Rashba spin-orbit couplings. We show that a crossover from perfect reflection to perfect transmission is achieved at normal incidence by tuning the perpendicular electric field. By further studying angular-dependent transmission, we demonstrate that perfect reflection at normal incidence can be clearly distinguished from trivial band gap effects. We also investigate how spin-orbit effects modify the conductance and the Fano factor associated with a potential step in both nn and np cases.

Citations

• Topological field theory of time-reversal invariant insulators
• Gate-induced insulating state in bilayer graphene devices
• Berry's Phase and Absence of Back Scattering in Carbon Nanotubes
• Transport Measurements Across a Tunable Potential Barrier in Graphene
• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
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• Conductance of p-n-p Graphene Structures with “Air-Bridge” Top Gates
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• The electronic properties of graphene
• Electronic Transport and Quantum Hall Effect in Bipolar Graphenep−n−pJunctions
• The Quantum Spin Hall Effect: Theory and Experiment