2009/03/30 by S. G. Chigarev, É. M. Épshteǐn, E. M. Epshtein +1
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Condensed matter physics #Current (fluid) #Ferromagnetism #Magnetic anisotropy #Magnetic field #Magnetic properties of thin films #Magnetization #Magnetization reversal #Magnetoresistive random-access memory #Materials science #Physics #Quantum and electron transport phenomena #Random access memory #Spin (aerodynamics) #Work (physics) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1002/pssb.200945305
5 pages, 1 figure
arxiv created 2009/03/30 · openalex publication_date 2009/11/11 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization reversal threshold can be lowered up to two times when the axes of the layers are noncollinear. The threshold may be decreased further under the influence of an external magnetic field.