Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

2009/03/25 by Shota Ono, Hiroyuki Shima · 4 citations
Engineering · Physics and Astronomy · #Condensed matter physics #Curvature #Electrical resistivity and conductivity #Electron #Electron scattering #Geometry #Materials science #Nanoscopic scale #Nanotechnology #Optics #Optoelectronics #Physics #Quantum and electron transport phenomena #Scattering #Semiconductor #Semiconductor materials and devices #Surface and Thin Film Phenomena #Thin film #cond-mat.mes-hall #cond-mat.other

paper · pdf · doi:10.1103/physrevb.79.235407

13 pages, 8 figures

arxiv created 2009/03/25 · openalex publication_date 2009/06/09 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.

Citations

• Quantum mechanics with constraints
• Curvature effects on surface electron states in ballistic nanostructures
• On geometric potentials in quantum-electromechanical circuits

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