2007/07/31 by Nabyendu Das, Suresh G. Mishra, Suresh G Mishra · 12 citations
Engineering · Materials Science · Physics and Astronomy · #Criticality #Dielectric #Dipole #Electronic and Structural Properties of Oxides #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Hydrostatic pressure #Quantum #Quantum fluctuation #Realization (probability) #cond-mat.mtrl-sci #cond-mat.stat-mech
paper · pdf · doi:10.1088/0953-8984/21/9/095901
published in Journal of Physics Condensed Matter 21(9), 095901 (IOP Publishing) · 9 pages, 3 figures, Published version
openalex publication_date 2009/02/04 · arxiv created 2009/02/05 · arxiv updated 2015/05/12 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The temperature dependence of the static dielectric susceptibility of a system with strongly coupled fluctuating dipoles is calculated within a self-consistent mean fluctuation field approximation. Results are qualitatively in good agreement with a quantum paraelectric SrTiO(3) in the low temperature regime. We identify this system as a gapped quantum paraelectric and suggest a possible experimental realization of a quantum critical paraelectric through the application of hydrostatic pressure or doping by impurity.