2014/05/23 by Kuntal Roy · 9 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Electric field #Energy (signal processing) #Ferromagnetism #Magnetic domain #Magnetic properties of thin films #Magnetization #Multiferroics #Multiferroics and related materials #Thermal #cond-mat.mes-hall
paper · pdf · doi:10.1088/0022-3727/47/25/252002
published in Journal of Physics D Applied Physics 47(25), 252002 (Institute of Physics)
openalex publication_date 2014/05/23 · arxiv created 2015/04/20 · arxiv updated 2015/04/22 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Electric field-induced magnetization switching in multiferroic magnetoelectric devices is promising for computing purposes in beyond Moore's law era. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled with a ferromagnetic layer, are particularly suitable for highly-dense, non-volatile, and ultra-low-energy computing. By solving the stochastic Landau–Lifshitz–Gilbert equation of magnetization dynamics in the presence of room-temperature thermal fluctuations, we demonstrate that error-resilient switching of magnetization is possible with a sub-nanosecond delay while expending only a minuscule amount of energy, of ∼1 attojoule. Such devices can be operated by drawing energy from the environment without the need for an external battery.