2011/04/30 by Zhenbing Tan, Changling Tan, ChangLing Tan +5 · 1 citation
Chemistry · Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Biasing #Chemistry #Condensed matter physics #Current (fluid) #DC bias #Graphene #Graphene research and applications #Magnetic field #Mathematics #Maxima and minima #Oscillation (cell signaling) #Physics #Quantum and electron transport phenomena #Quantum mechanics #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.84.115429
published as Physical Review B 84, 115429 (2011) · 5 pages, 4 figures, A few references added
arxiv created 2011/08/14 · openalex publication_date 2011/09/21 · arxiv updated 2015/03/18 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single-layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset bias current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.