2017/05/03 by Adrian Philipp Maier, Maier, Adrian, Christian Reichl +7
Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1705.01579
openalex publication_date 2017/05/03 · openalex created_date 2017/05/12 · openalex updated_date 2026/07/28
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the recombination of electrons and spin-polarized holes was generated and mapped with a spatial resolution of one micrometer. An edge accumulated spin polarization of up to 11% was measured, induced solely by application of an electric Field perpendicular to the pn-junction. Using a quantum dot structure as light source, a linear dependence of the effective spin polarization, and with that the dominance of the spin Hall effect, with the electric field is seen. Spatially resolved spectroscopy from an epitaxially fabricated LED is demonstrated to be a valuable tool to probe the edge states of electron and hole gases in reduced dimensions.