Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

2011/01/13 by C. Brüne, C. X. Liu, E. G. Novik +7 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.106.126803

published as Phys. Rev. Lett. 106, 126803 (2011) · 7 pages, 6 figures

arxiv created 2011/01/13 · arxiv updated 2015/03/17

Abstract

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

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