2011/01/31 by Hao Tang, Dong Liang, Richard L. J. Qiu +1 · 1 citation
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Gapless playback #Graphene research and applications #Insulator (electricity) #Magnetic field #Nanomaterials #Perpendicular #Semiconductor #Surface states #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall
paper · pdf · doi:10.1021/nn2024607
published as ACS Nano 5, 7510-7516 (2011) · ACS Nano, in press
openalex publication_date 2011/07/27 · arxiv created 2011/08/02 · arxiv updated 2015/03/17 · openalex created_date 2019/06/27 · openalex updated_date 2026/08/05
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi(2)Se(3) nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi(2)Te(3), and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi(2)Se(3) nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic applications.