2015/03/13 by Abhijit Biswas, Yoon Hee Jeong · 25 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Analytical Chemistry (journal) #Chemistry #Condensed matter physics #Crystallography #Electrical resistivity and conductivity #Electron #Electronic and Structural Properties of Oxides #Fermi level #Heterojunction #Ion #Magnetic and transport properties of perovskites and related materials #Materials science #Metal #Metallurgy #Metal–insulator transition #Nanotechnology #Optoelectronics #Oxide #Perovskite (structure) #Physics #Secondary ion mass spectrometry #Substrate (aquarium) #Thin film #cond-mat.str-el
paper · pdf · doi:10.1088/0022-3727/48/13/135303
published in Journal of Physics D Applied Physics 48(13), 135303 (Institute of Physics) · 19 pages, 5 figures, published
openalex publication_date 2015/03/13 · arxiv created 2015/03/16 · arxiv updated 2015/03/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO 3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO 3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sublinear temperature dependent non-Fermi liquid behaviors in resistivity, the insulating film grown at a higher temperature stands out for its inhomogeneous Ir distribution, as analyzed by secondary ion mass spectrometry. This observation demonstrates that the inhomogeneous distribution of cations can be one of the fundamental factors in affecting the electronic transport in heavy element based oxide films and heterostructures.