2010/05/14 by G. De Filippis, V. Cataudella, S. Fratini +1
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advanced Materials and Semiconductor Technologies #Composite material #Electrical engineering #Engineering #Engineering physics #Field (mathematics) #Field-effect transistor #Interface (matter) #Materials science #Mathematics #Optoelectronics #Organic Electronics and Photovoltaics #Organic and Molecular Conductors Research #Physics #Polaron #Quantum mechanics #Transistor #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.82.205306
9 pages, 9 figures
arxiv created 2010/05/14 · openalex publication_date 2010/11/05 · arxiv updated 2015/03/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
A model describing the low-density carrier state in an organic single-crystal field-effect transistor (FET) with high-\ensuremathκ gate dielectrics is studied. The interplay between charge-carrier coupling with intermolecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could drive the carriers close to self-trapping in high-\ensuremathκ organic FETs without invoking unphysically large values of the carrier-interface interaction.