2013/10/01 by Yu. I. Latyshev, A. P. Orlov, A. V. Frolov +8 · 2 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Crystallography and Radiation Phenomena #Dirac (video compression format) #Dirac fermion #Equidistant #Fermi Gamma-ray Space Telescope #Fermion #Graphene #Graphene research and applications #Massless particle #Quantization (signal processing) #cond-mat.mes-hall
paper · pdf · doi:10.1134/s0021364013170098
published as JETP Letters, 98, 214 (2013) · 7 pages, 5 figures
openalex publication_date 2013/10/01 · arxiv created 2015/03/04 · arxiv updated 2015/03/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level E F, which is varied by the gate voltage V g, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO2 substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(V g) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of E F through an equidistant set of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.