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Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction

2014/08/31 by Matteo Calandra, Paolo Zoccante, Francesco Mauri · 17 citations
Chemistry · Materials Science · Physics and Astronomy · #Condensed matter physics #Doping #Electron #Electronic and Structural Properties of Oxides #Inorganic Chemistry and Materials #Materials science #Physics #Quantum mechanics #Semiconductor #Superconductivity #Superconductivity in MgB2 and Alloys #cond-mat.mtrl-sci #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevlett.114.077001

published in Physical Review Letters 114(7), 077001 (American Physical Society) · 5 Pages + Supplementary materials, 9 Pictures overall, to appear on Phys. Rev. Lett

arxiv created 2015/01/13 · openalex publication_date 2015/02/18 · arxiv updated 2015/03/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. By performing first-principles calculations beyond density functional theory, we prove that this effect accounts for the unconventional doping dependence of the superconducting transition temperature (T(c)) and of the magnetic susceptibility measured in Li(x)ZrNCI. Finally, we discuss what are the conditions for a maximal T(c) enhancement in weakly doped two-dimensional semiconductors.

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