2014/06/10 by Marc Drögeler, Frank Volmer, Maik Wolter +6 · 2 citations
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1021/nl501278c
published as Nano Lett. 11, 6050 (2014) · 15 pages, 5 figures
arxiv created 2014/06/10 · arxiv updated 2015/03/04
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10μm combined with carrier mobilities exceeding 20,000 cm2/Vs.