2014/12/03 by Maria Barbara Maccioni, Francesco Ricci, Vincenzo Fiorentini · 21 citations
Materials Science · Physics and Astronomy · #Alloy #Copper-based nanomaterials and applications #Epitaxy #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Interface (matter) #Range (aeronautics) #Solid solubility #Solubility #cond-mat.mtrl-sci
paper · pdf · doi:10.7567/apex.8.021102
published in Applied Physics Express 8(2), 021102 (Institute of Physics) · 3 pages, 3 figures
arxiv created 2014/12/03 · openalex publication_date 2015/01/27 · arxiv updated 2015/02/03 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Using first-principles calculations, we show that the maximum reachable concentration x in the (Ga 1− x In x ) 2 O 3 alloy in the low- x regime (i.e., the In solubility in β-Ga 2 O 3 ) is around 10%. We then calculate the band alignment at the (100) interface between β-Ga 2 O 3 and (Ga 1− x In x ) 2 O 3 at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is type-B staggered when the alloy is epitaxial on Ga 2 O 3 and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys.