2014/12/30 by Chong Bi, Yaohua Liu, T. Newhouse-Illige +10 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Condensed matter physics #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #Magnetism #Materials science #Physics #Quantum mechanics #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.113.267202
published as Phys. Rev. Lett. 113, 267202 (2014) · 12 pages, 9 figures, including supplemental materials. Phys. Rev. Lett., in press (Editors' Suggestion, featured in Physics)
arxiv created 2014/12/30 · openalex publication_date 2014/12/30 · arxiv updated 2014/12/31 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.