2014/12/11 by G. Allison, Giles Allison, T. Fujita +16 · 17 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Electron #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.90.235310
published in Physical Review B 90(23) (American Physical Society)
openalex publication_date 2014/12/11 · arxiv created 2014/12/19 · arxiv updated 2014/12/22 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We evaluate the Land'e g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Land'e electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Land'e electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.