2014/02/28 by Zeinab Rashidian, Yu. V. Bludov, Yuliy V. Bludov +6 · 17 citations
Engineering · Materials Science · Physics and Astronomy · #Absorption (acoustics) #Atomic physics #Band gap #Composite material #Condensed matter physics #Conductivity #Doping #Electronic band structure #Graphene #Graphene research and applications #Intensity (physics) #Materials science #Nanotechnology #Nesting (process) #Optical conductivity #Optics #Optoelectronics #Photonic Crystals and Applications #Physics #Plasmonic and Surface Plasmon Research #Resonance (particle physics) #cond-mat.mes-hall
paper · pdf · doi:10.1088/0953-8984/26/39/395301
published in Journal of Physics Condensed Matter 26(39), 395301 (IOP Publishing)
openalex publication_date 2014/09/05 · arxiv created 2014/12/10 · arxiv updated 2014/12/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the 'nesting' of two nearly parabolic bands in the electronic spectrum. The intensity of this resonant absorption can be controlled by adjusting the gate voltage. The effect is robust with respect to increasing temperature.