2014/11/17 by Han Woong Yeom, Sung Hwan Kim, Woo Jong Shin +8
Materials Science · Mathematics · Physics and Astronomy · #Combinatorics #Condensed matter physics #Electron #Electronic and Structural Properties of Oxides #Geometry #Graphene research and applications #Insulator (electricity) #Materials science #Mathematics #Monolayer #Nanotechnology #Optoelectronics #Physics #Quantum mechanics #Surface (topology) #Surface states #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.90.235401
published as Phys. Rev. B 90, 235401 (2014) · 5 pages, 4 figures
arxiv created 2014/11/17 · openalex publication_date 2014/12/01 · arxiv updated 2014/12/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We introduce a distinct approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.