2014/05/15 by Yuval Baum, Jan Böttcher, J. Böttcher +7 · 2 citations
Engineering · Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Algorithm #Charge (physics) #Computer science #Condensed matter physics #Electrical engineering #Engineering #Gapless playback #Geometry #Graphene research and applications #Mathematics #Physics #Quantum mechanics #Surface (topology) #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.89.245136
published as Phys. Rev. B 89, 245136 (2014) · 8 pages, 9 figures
arxiv created 2014/05/15 · openalex publication_date 2014/06/30 · arxiv updated 2014/12/04 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this paper we theoretically analyze the gate-voltage effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.