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Spin-dependent thermoelectric effects in transport through a nanoscopic junction involving a spin impurity

2014/06/30 by Maciej Misiorny, J. Barnaś, Józef Barnaś
Engineering · Physics and Astronomy · #Condensed matter physics #Electron #Ferromagnetism #Impurity #Magnetic impurity #Materials science #Molecular Junctions and Nanostructures #Physics #Quantum and electron transport phenomena #Quantum tunnelling #Spin (aerodynamics) #Spin Hall effect #Spin polarization #Surface and Thin Film Phenomena #Thermoelectric effect #Tunnel magnetoresistance #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.89.235438

published as Physical Review B 89, 235438 (2014) · 24 pages with 7 figures, version as published

openalex publication_date 2014/06/30 · arxiv created 2014/11/10 · arxiv updated 2014/11/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the linear-response regime. The impurity is described by the giant spin Hamiltonian, with both uniaxial and transverse magnetic anisotropy taken into account. Owing to the presence of the transverse component of magnetic anisotropy, the spin of a tunneling electron can be reversed during scattering on the impurity, even in the low-temperature regime. This reversal appears due to the exchange interaction of tunneling electrons with the magnetic impurity. We calculate Seebeck and spin Seebeck coefficients, and analyze their dependence on various parameters of the spin impurity and tunnel junction. In addition, conventional and spin figures of merit as well as the electronic contribution to heat conductance are considered. We also show that pure spin current can be driven by a spin bias applied to the junction with spin impurity, even if no electron transfer between the electrodes can take place. The underlying mechanism employs single-electrode tunneling processes (electrode-spin exchange interaction) and the impurity as an intermediate reservoir of angular momentum.

Citations