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Transport in Two-Dimensional Disordered Semimetals

2014/05/31 by Michael Knap, Jay D. Sau, Bertrand I. Halperin +1 · 24 citations
Materials Science · Physics and Astronomy · #Band gap #Condensed matter physics #Divergence (linguistics) #Electrical resistivity and conductivity #Electron #Graphene research and applications #Limit (mathematics) #Perpendicular #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semimetal #Topological Materials and Phenomena #Zero temperature #cond-mat.dis-nn #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.113.186801

published in Physical Review Letters 113(18), 186801 (American Physical Society) · 5 pages, 4 figures, plus supplemental material. V2: minor clarifications and an additional reference. V3: as published

openalex publication_date 2014/10/27 · arxiv created 2014/10/28 · arxiv updated 2014/10/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor networks. In the presence of smooth disorder and in the limit of a weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.

Citations