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Two-Dimensional TaSe2 Metallic Crystals: Spin–Orbit Scattering Length and Breakdown Current Density

2014/08/16 by Adam T. Neal, Yuchen Du, Han Liu +1 · 57 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Condensed matter physics #Current (fluid) #Current density #Heusler alloys: electronic and magnetic properties #MXene and MAX Phase Materials #Magnetic field #Magnetization #Materials science #Metal #Optics #Orbit (dynamics) #Physics #Quantum mechanics #Scattering #Spin (aerodynamics) #Spin current #Spin density #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/nn5027164

published in ACS Nano 8(9), 9137-9142 (American Chemical Society) · to be published in ACS Nano

arxiv created 2014/08/16 · openalex publication_date 2014/08/18 · arxiv updated 2014/10/06 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak antilocalization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. A material must also support large charge currents in addition to strong spin-orbit coupling to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7 × 10(7) A/cm(2). This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.

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