2014/01/29 by Yang Liu, A. L. Graninger, S. Hasdemir +5 · 32 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge (physics) #Condensed matter physics #Electron #Fractional quantum Hall effect #Physics #Physics of Superconductivity and Magnetism #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.112.046804
published in Physical Review Letters 112(4), 046804 (American Physical Society)
arxiv created 2014/01/29 · openalex publication_date 2014/01/29 · arxiv updated 2014/09/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We observe the fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor ν=1/2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayerlike charge distributions. The ν=1/2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole ν=1/2 FQHE to be consistent with a two-component, Halperin-Laughlin (Ψ331) state.