2013/11/29 by A. Phirouznia, L. Javadian, J. Poursamad Bonab +1
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1007/s00339-014-8413-4
published as Appl. Phys. A (2014) 116:2107
arxiv created 2013/11/29 · openalex publication_date 2014/04/15 · arxiv updated 2014/09/02 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/29
Low field response function calculations have been performed on a two-dimensional electron gas with well-defined electron-surface roughness scattering. The Lindhard model was employed to compute the response function. In particular, detailed investigations were made on the system searching for an interplay between surface roughness with well-defined correlation function, (characterizes by asperity height and correlation length) spatial confinement and the dielectric function. We analyze to what extent the normal behavior and functionality of dielectric function of two-dimensional devices are modified by random scattering events caused by the contribution from the surface roughness. Results of the current work indicate that contribution of the surface roughness on scattering and absorption process could not be considered as an underestimating effect. We find, however, that functionality of the dielectric function seems to be quite independent of the particular roughness features.