2014/02/24 by Markus Meinert, Manuel P. Geisler, Jan Schmalhorst +9
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Chemistry #Condensed matter physics #Crystallography #Electrical resistivity and conductivity #Heusler alloys: electronic and magnetic properties #Impurity #Intermetallics and Advanced Alloy Properties #MXene and MAX Phase Materials #Materials science #Physics #Residual resistivity #Seebeck coefficient #Superconductivity #Thermodynamics #Thermoelectric effect #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.90.085127
published as Phys. Rev. B 90, 085127 (2014) · 6 pages, 6 figures
arxiv created 2014/02/24 · openalex publication_date 2014/08/20 · arxiv updated 2014/08/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Single-phase films of the full-Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4 eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to residual off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.