1995/01/01 by L. Gea, Laurence A. Gea, L. A. Boatner +2 · 1 citation
Materials Science · #Ga2O3 and related materials #Transition Metal Oxide Nanomaterials #ZnO doping and properties
paper · doi:10.1557/proc-382-107
crossref issued 1995/01/01 · crossref published 1995/01/01 · crossref published-print 1995/01/01 · openalex publication_date 1995/01/01 · crossref published-online 2011/02/15 · crossref created 2011/04/05 · crossref deposited 2021/02/24 · crossref indexed 2022/04/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/19
ABSTRACT High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of cx-A1 2 0 3 . Thin, two-dimensional multilayered structures have been formed by implanting c -axis and a -axis-oriented single crystals of A1 2 03 at room temperature with vanadium (10 17 ions/cm 2 at 300 keV) and oxygen (2 × 10 17 ions/cm 2, 120 keV) followed by a rapid anneal at 1000ºC. Cross-sectional TEM studies showed thatthis process produced a buried layer of V 2 O 3 located about 120 nm below the A1 2 O 3 surface. X-raydiffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host A1 2 O 3 lattice. The orientational relationship was subsequently confirmed by RBS/ channeling techniques. V 2 O 3 exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and opticalproperties, and this phase transition was observed through in-situ TEM cooling studies ofcross-sectional samples.