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Electronic structure of the negatively charged silicon-vacancy center in diamond

2013/10/31 by Lachlan J. Rogers, Kay D. Jahnke, Marcus W. Doherty +9
Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Force Microscopy Techniques and Applications #High-pressure geophysics and materials #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.89.235101

8 pages, 8 figures

arxiv created 2014/03/04 · openalex publication_date 2014/06/02 · arxiv updated 2014/06/23 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/04

Abstract

The negatively charged silicon-vacancy (SiV^\ensuremath-) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a \ensuremath⟨111\ensuremath⟩ aligned split-vacancy structure with D3d symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.

Citations