2012/02/29 by M. Gustafsson, Martin V. Gustafsson, Arsalan Pourkabirian +3 · 1 citation
Engineering · Physics and Astronomy · #Analog and Mixed-Signal Circuit Design #Artificial intelligence #Charge (physics) #Computer science #Materials science #Mechanical and Optical Resonators #Noise (video) #Physics #Quantum and electron transport phenomena #Quantum mechanics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.88.245410
published as Physical Review B 88, 245410 (2013)
arxiv created 2013/10/23 · openalex publication_date 2013/12/10 · arxiv updated 2014/06/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.