2013/01/10 by Fabio Novelli, Daniele Fausti, Francesca Giusti +4 · 3 citations
Engineering · Physics and Astronomy · #Broadband #Computer science #Condensed matter physics #Materials science #Measure (data warehouse) #Optics #Optoelectronics #Phase (matter) #Physics #Quantum mechanics #Saturation (graph theory) #Semiconductor #Semiconductor Quantum Structures and Devices #Spectroscopy and Quantum Chemical Studies #Statistical physics #Terahertz radiation #Terahertz technology and applications #cond-mat.mtrl-sci #physics.optics
paper · pdf · doi:10.1038/srep01227
published as Scientific Reports 3, 1227, 2013
arxiv created 2013/01/10 · openalex publication_date 2013/02/06 · arxiv updated 2014/02/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Significant changes of the optical properties of semiconductors can be observed by applying strong electric fields capable to modify the band structure at equilibrium. This is known as the Franz-Keldysh effect (FKE). Here we study the FKE in bulk GaAs by combining single cycle THz pumps and broadband optical probes. The experiments show that the phase content of the selected electromagnetic pulses can be used to measure the timescales characteristic for the different regimes of matter-light interactions. Furthermore, the present phase-resolved measurements allow to identify a novel regime of saturation where memory effects are of relevance.