2013/12/18 by Han Liu, Mengwei Si, Yexin Deng +6
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advanced Memory and Neural Computing #Composite material #Contact resistance #Electrical engineering #Ferroelectric and Negative Capacitance Devices #Layer (electronics) #Materials science #Molybdenum disulfide #Nanotechnology #Optoelectronics #Schottky barrier #Schottky diode #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1021/nn405916t
published as ACS Nano, 8, 1031-1038 (2014) · ACS Nano, ASAP (2013)
openalex publication_date 2013/12/18 · arxiv created 2013/12/19 · arxiv updated 2014/01/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ∼0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning of the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.