2013/07/27 by N. Ares, G. Katsaros, V. N. Golovach +5 · 39 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Electrode #Modulation (music) #Perpendicular #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Rabi cycle #Rabi frequency #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spins #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4858959
published in Applied Physics Letters 103(26) (American Institute of Physics)
arxiv created 2013/07/27 · openalex publication_date 2013/12/23 · arxiv updated 2014/01/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.