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Coulomb Oscillations in Antidots in the Integer and Fractional Quantum Hall Regimes

2012/01/08 by Angela Kou, A. Kou, C. M. Marcus +2 · 33 citations
Computer Science · Physics and Astronomy · #Composite fermion #Condensed matter physics #Coulomb #Electron #Fractional quantum Hall effect #Integer (computer science) #Magnetic field #Physics #Quantum Computing Algorithms and Architecture #Quantum Hall effect #Quantum Information and Cryptography #Quantum and electron transport phenomena #Quantum electrodynamics #Quantum mechanics #Quantum spin Hall effect #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/physrevlett.108.256803

published in Physical Review Letters 108(25), 256803 (American Physical Society) · related papers at http://marcuslab.harvard.edu

arxiv created 2012/01/08 · openalex publication_date 2012/06/19 · arxiv updated 2014/01/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor ν = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at ν = 2/3 a tunneling charge of (2/3)e and a single charged edge.

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