2011/12/02 by D. T. McClure, Douglas McClure, W. Chang +4 · 95 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Coulomb #Electron #Filling factor #Interferometry #Magnetic field #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Topological Materials and Phenomena #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.108.256804
published in Physical Review Letters 108(25), 256804 (American Physical Society)
arxiv created 2011/12/02 · openalex publication_date 2012/06/19 · arxiv updated 2014/01/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3, and 5/3 in the constrictions are compared to those near integer quantum Hall (IQH) filling factors in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. A charging-model analysis of gate-voltage periods yields an effective tunneling charge e* ≈ e/3 for all FQH states and e* ≈ e for IQH states. Temperature decay of the oscillations appears exponential, qualitatively consistent with a recent prediction, and the surprising filling-factor dependence of the associated energy scale may shed light on edge structure.