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Strain effects on the spin-orbit-induced band structure splittings in monolayer MoS<mml:mrow/>2and graphene

2013/08/13 by Tawinan Cheiwchanchamnangij, Walter R. L. Lambrecht, Yang Song +1 · 2 citations
Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Condensed matter physics #Coupling (piping) #Graphene #Graphene research and applications #Hamiltonian (control theory) #Materials science #Mathematics #Phonon #Physics #Quantum mechanics #Scattering #Topological Materials and Phenomena #Valence (chemistry) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.88.155404

published as Physical Review B 88, 155404 (2013) · 9 pages, 5 figures

arxiv created 2013/08/13 · openalex publication_date 2013/10/07 · arxiv updated 2013/10/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The strain effects on the spin-orbit-induced splitting of the valence-band maximum and conduction-band minimum in monolayer MoS2 and the gap in graphene are calculated using first-principles calculations. The dependence of these splittings on the various symmetry types of the strain is described by means of an effective Hamiltonian based on the method of invariants, and the parameters in the model are extracted by fitting to the theory. These splittings are related to acoustic-phonon deformation potentials or electron-phonon-coupling matrix elements which enter the spin-dependent scattering theory of conduction in these materials.

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