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Controllable valley and spin transport in ferromagnetic silicene junctions

2013/06/12 by Takehito Yokoyama · 2 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Coupling (piping) #Electric field #Electron #Ferromagnetism #Graphene research and applications #Materials science #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Silicene #Silicon #Spin (aerodynamics) #Spin polarization #Topological Materials and Phenomena #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.87.241409

published as Phys. Rev. B 87, 241409(R) (2013) · 4 pages, 6 figures

arxiv created 2013/06/12 · openalex publication_date 2013/06/26 · arxiv updated 2013/06/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We investigate charge, valley, and spin transports in a normal/ferromagnetic/normal silicene junction. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is also found that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find a fully valley and spin polarized current by applying the electric field. We also obtain the condition for observing the fully valley and spin polarized current.

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