Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

2013/05/31 by Keliang He, Charles Poole, Kin Fai Mak +1 · 3 citations
Physics and Astronomy · #cond-mat.mes-hall

paper · pdf · doi:10.1021/nl4013166

published as Nano Lett., 2013, 13 (6), pp 2931 · 19 pages and 4 figures including supporting information. Nano Lett., 2013, 13 (6), pp 2931

arxiv created 2013/06/21 · arxiv updated 2013/06/24

Abstract

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, have been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of twodimensional crystals for applications in flexible electronics and optoelectronics.

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