Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

2013/03/22 by C. Tournier-Colletta, L. Moreschini, G. Autès +10 · 1 citation
Physics and Astronomy · #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.110.236401

published as Phys. Rev. Lett. 110, 236401 (2013) · 5 pages, 3 figures

arxiv created 2013/03/22 · arxiv updated 2013/06/21

Abstract

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.

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