2010/09/30 by Farhan Rana, Jared H. Strait, Haining Wang +1 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Absorption (acoustics) #Atomic physics #Chemistry #Condensed matter physics #Graphene #Graphene and Nanomaterials Applications #Graphene research and applications #Laser #Materials science #Molecular physics #Nanotechnology #Optics #Optoelectronics #Phonon #Physics #Picosecond #Plasmon #Plasmonic and Surface Plasmon Research #Recombination #Spontaneous emission #Surface plasmon #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.84.045437
published as Phys. Rev. B (2011) · 7 Pages, 11 Figures, To appear in Phys. Rev. B (2011)
arxiv created 2011/06/10 · openalex publication_date 2011/07/18 · arxiv updated 2013/05/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Electron-hole generation and recombination rates for plasmon emission and absorption in graphene are presented. The recombination times of carriers due to plasmon emission are found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in graphene layers on polar substrates.