2009/08/31 by M. Titov, P. M. Ostrovsky, I. V. Gornyi +2
Engineering · Materials Science · Physics and Astronomy · #Atomic physics #Charge (physics) #Charge carrier #Condensed matter physics #Conductance #Graphene #Graphene research and applications #Impurity #Ionized impurity scattering #Materials science #Molecular Junctions and Nanostructures #Nanotechnology #Optics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.104.076802
published as Phys. Rev. Lett. 104, 076802 (2010) · 11 pages, 6 figures; published version, appendix with technical details added
arxiv created 2010/02/08 · openalex publication_date 2010/02/18 · arxiv updated 2013/05/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(pi2h) per resonant impurity.