2013/03/31 by Thomas F. Kent, Santino D. Carnevale, Roberto C. Myers
Materials Science · Physics and Astronomy · #Diode #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Light-emitting diode #Materials science #Optoelectronics #Physics #Threshold voltage #Transistor #Ultraviolet #Voltage #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4807385
published as Appl. Phys. Lett. 102, 201114 (2013) · 5 pages and 3 figures. Copyright, American Institute of Physics, 2013. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
openalex publication_date 2013/05/20 · arxiv created 2013/05/23 · arxiv updated 2013/05/24 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Self-assembled AlxGa1–xN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd intra-f-shell electronic transitions at 313 nm and 318 nm is observed under forward biases above 5 V. The intensity of the Gd 4f EL scales linearly with current density and increases at lower temperature. The low field excitation of Gd 4f EL in PINLEDs is contrasted with high field excitation in metal/Gd:AlN/polarization-induced n-AlGaN devices; PINLED devices offer over a three fold enhancement in 4f EL intensity at a given device bias.