2013/02/27 by ZhenHua Wang, Zhenhua Wang, Richard L. J. Qiu +5 · 2 citations
Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Graphene research and applications #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1021/nn304684b
published as ACS Nano, 7, 2126-2131 (2013) · ACS Nano, in press. See http://gaogroup.case.edu/index.php/Publications for related papers from our lab
openalex publication_date 2013/02/27 · arxiv created 2013/03/15 · arxiv updated 2013/05/21 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1-xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states.