2012/09/30 by Hai-Feng Lu, Hai‐Feng Lü, Hai-Zhou Lu +3
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.87.195122
published as Phys. Rev. B 87, 195122 (2013) · 11 pages, 8 figures
openalex publication_date 2013/05/15 · arxiv created 2013/05/20 · arxiv updated 2013/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We investigate physical properties of an Anderson impurity embedded in the bulk of a topological insulator. The slave-boson mean-field approximation is used to account for the strong electron correlation at the impurity. Different from the results of a quantum impurity on the surface of a topological insulator, we find for the band-inverted case that a Kondo resonant peak and in-gap bound states can be produced simultaneously. However, only one of them appears for the normal case. It is shown that the mixed-valence regime is much broader in the band-inverted case, while it shrinks to a very narrow regime in the normal case. Furthermore, a self-screening of the Kondo effect may appear when the interaction between the bound-state spin and impurity spin is taken into account.