2011/06/22 by Ashley DaSilva, Ashley M. DaSilva
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.ssc.2011.07.001
published as Solid State Communications 151, 1444 (2011) · 8 pages, 2 figures
arxiv created 2011/06/22 · openalex publication_date 2011/07/10 · arxiv updated 2013/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the n=0 and |n|=1 Landau levels, it is ruled out in higher |n| Landau levels. Unlike graphene, the fractional quantum Hall effect in topological insulators is predicted to show an interesting asymmetry between n=1 and n=-1 Landau levels due to spin-orbit coupling.