2004/01/25 by F. Güell, Frank Güell, Jna. Gavaldà +9
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Atomic physics #Chemistry #Crystal structure #Crystallography #Dopant #Doping #Ion #Luminescence Properties of Advanced Materials #Materials science #Monoclinic crystal system #Optical properties and cooling technologies in crystalline materials #Optoelectronics #Physical chemistry #Physics #Polarization (electrochemistry) #Solid State Laser Technologies #Thulium
paper · pdf · doi:10.1063/1.1633985
openalex publication_date 2004/01/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
By exciting at 788 nm, we have characterized the near infrared emissions of trivalent thulium ions in monoclinic KGd(WO4)2 single crystals at 1.48 and 1.84 μm as a function of dopant concentration from 0.1% to 10% and temperature from 10 K to room temperature. We used the reciprocity method to calculate the maximum emission cross-section of 3.0×10−20 cm2 at 1.838 μm for the polarization parallel to the Nm principal optical direction. These results agrees well with the experimental data. Experimental decay times of the H43→3F4 and F43→3H6 transitions have been measured as a function of thulium concentration.