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Low temperature investigations of single silicon vacancy colour centres in diamond

2012/10/31 by Elke Neu, Christian Hepp, Michael Hauschild +6 · 1 citation
Physics and Astronomy · #quant-ph #cond-mat.mtrl-sci

paper · pdf · doi:10.1088/1367-2630/15/4/043005

published as New J. Phys. 15 (2013) 043005 · 19 pages, 9 figures, latest version accepted for publication in New Journal of Physics

arxiv created 2013/03/04 · arxiv updated 2013/04/08

Abstract

We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.

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