2013/02/18 by E. V. Kurganova, S. Wiedmann, A. J. M. Giesbers +8
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.87.085447
published as Phys. Rev. B 87, 085447 (2013) · 5 pages, 5 figures, corrected typo in author's name
arxiv created 2013/02/18 · openalex publication_date 2013/02/28 · arxiv updated 2013/04/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
We present temperature-dependent magnetotransport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations s responsible for the formation of electron-hole puddles. The experimental value s\ensuremath≈20 meV is considerably larger than in conventional semiconductors, which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized.