2010/08/01 by G. Sęk, A. Musiał, Anna Musiał +2 · 3 citations
Physics and Astronomy · Materials Science · #Semiconductor Quantum Structures and Devices #Quantum and electron transport phenomena #Quantum Dots Synthesis And Properties
paper · doi:10.1063/1.3467002
Hereby, we present a few level rate equation model in a context of the interpretation of excitation power dependent exciton and biexciton emission intensity from single quantum-dot-like structures. We emphasize that it not only allows identifying the excitonic and biexcitonic emission from one quasi-zero-dimensional object, but gives also an insight into the kinetics of the carriers confined in the system (both the internal dynamics of the exciton within its fine structure and the relative exciton to biexciton lifetimes ratio), the regime of the confinement itself and the importance of the higher energy levels occupation. Eventually, there are presented and discussed examples of the rate equation model application for an analysis of the experimental data for several kinds of epitaxial nanostructures.