2012/11/21 by Konrad H. Thomas, Konrad Thomas, Christian Flindt · 6 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.87.121405
published as Phys. Rev. B 87, 121405(R) (2013) · 4+ pages, 3 figures
arxiv created 2012/11/21 · openalex publication_date 2013/03/15 · arxiv updated 2013/03/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We formulate a quantum theory of electron waiting time distributions for charge transport in nanostructures described by non-Markovian generalized master equations. We illustrate our method by calculating the waiting time distribution of electron transport through a dissipative double quantum dot, where memory effects are present due to a strongly coupled heat bath. We consider the influence of non-Markovian dephasing on the distribution of electron waiting times and discuss how spectral properties of the heat bath may be detected through measurements of the electron waiting time.