2011/09/13 by Seung Sae Hong, J. Judy, Judy J. Cha +2 · 241 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Band gap #Condensed matter physics #Doping #Electron #Gapless playback #Graphene research and applications #Materials science #Nanotechnology #Optoelectronics #Physics #Surface (topology) #Surface states #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1038/ncomms1771
published in Nature Communications 3(1), 757 (Nature Portfolio) · 5 pages, 4 figures, 1 table
arxiv created 2011/09/13 · openalex publication_date 2012/03/27 · arxiv updated 2013/03/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x1011/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.